IRLML0040TRPBF hexfet power mosfet micro3 tm (sot-23) IRLML0040TRPBF d s g 3 1 2 features and benefits application(s) ? load/ system switch ? dc motor drive features benefits absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 c/w max. 3.6 2.9 -55 to + 150 16 0.01 40 a 1.3 0.8 15 w v dss 40 v v gs max 16 v r ds(on) max (@v gs = 10v) 56 m r ds(on) max (@v gs = 4.5v) 78 m low r ds(on) ( 56m ) lower switching losses industry-standard pinout multi-vendor compatibility compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1, consumer qualification increased reliability product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
d s g electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.04 ??? v/c ??? 44 56 ??? 62 78 v gs(th) gate threshold voltage 1.0 1.8 2.5 v i dss ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.1 ??? gfs forward transconductance 6.2 ??? ??? s q g total gate charge ??? 2.6 3.9 q gs gate-to-source charge ??? 0.7 ??? q gd gate-to-drain ("miller") charge ??? 1.4 ??? t d(on) turn-on delay time ??? 5.1 ??? t r rise time ??? 5.4 ??? t d(off) turn-off delay time ??? 6.4 ??? t f fall time ??? 4.3 ??? c iss input capacitance ??? 266 ??? c oss output capacitance ??? 49 ??? c rss reverse transfer capacitance ??? 29 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 10 ??? ns q rr reverse recovery charge ??? 9.3 ??? nc static drain-to-source on-resistance m r ds(on) v gs = 4.5v, i d = 2.9a di/dt = 100a/ s v gs = 16v v gs = -16v t j = 25c, v r = 32v, i f = 1.3 a mosfet symbol showing the v ds = 20v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz t j = 25c, i s = 1.3a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 3.6a v ds = v gs , i d = 25 a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c drain-to-source leakage current a v ds = 10v, i d = 3.6a i d = 3.6a na nc i d = 1.0a r g = 6.8 v gs = 4.5v v dd = 20v ns pf a 1.3 15 ??? ??? ??? ??? IRLML0040TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
|
